MJD42CT4G
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | MJD41C, MJD42C |
| Description | Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Surface Mount DPAK |
sellers MJD42CT4G
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJD42CT4G
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 6A
- Power Dissipation (Pd) 1.75W
- Transition Frequency (fT) 3MHz
- DC Current Gain (hFE@Ic,Vce) 15@3A,4V
- Collector Cut-Off Current (Icbo) 50uA
- Collector-Emitter Breakdown Voltage (Vceo) 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.5V@6A,600mA
- Package TO-252
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 6A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max) 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V
- Power - Max 1.75W
- Frequency - Transition 3MHz
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package DPAK
- Base Part Number MJD42
- detail Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Surface Mount DPAK
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