FQD8P10TM
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | FQD8T10, FQU8P10 |
| Description | P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak |
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مشخصات FQD8P10TM
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQD8P10TM
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;44W
- Total Gate Charge (Qg@Vgs) 15nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 470pF@25V
- Continuous Drain Current (Id) 6.6A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 530mΩ@3.3A,10V
- Package TO-252
- Manufacturer onsemi
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 530mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D-Pak
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number FQD8
- detail P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak
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