NTD20N03L27T4G
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | NTD20N03L27, NVD20N03L27 |
| Description | N-Channel 30V 20A (Ta) 1.75W (Ta), 74W (Tc) Surface Mount DPAK |
فروشنده های NTD20N03L27T4G
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مشخصات NTD20N03L27T4G
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTD20N03L27T4G
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 1.75W;74W
- Total Gate Charge (Qg@Vgs) 18.9nC@10V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 1260pF@25V
- Continuous Drain Current (Id) 20A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 27mΩ@5V,10A
- Package TO-252
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
- Rds On (Max) @ Id, Vgs 27mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 18.9nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 25V
- FET Feature -
- Power Dissipation (Max) 1.75W (Ta), 74W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number NTD20
- detail N-Channel 30V 20A (Ta) 1.75W (Ta), 74W (Tc) Surface Mount DPAK
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