MSD602-RT1G
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| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | MSD602-RT1 |
| Description | Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59 |
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مشخصات MSD602-RT1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MSD602-RT1G
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 500mA
- Power Dissipation (Pd) 200mW
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 120@150mA,10V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@300mA,30mA
- Package SC-59
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 500mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA, 10V
- Power - Max 200mW
- Frequency - Transition -
- Mounting Type Surface Mount
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SC-59
- Base Part Number MSD60
- detail Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59
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