NJW3281G
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| Manufacturer | SPTECH |
| Package | TO-3P-3, SC-65-3 |
| Datasheet | NJW3281G, NJW1302G |
| Description | Bipolar (BJT) Transistor NPN 250V 15A 30MHz 200W Through Hole TO-3P-3L |
sellers NJW3281G
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NJW3281G | بدون قیمت |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet SPTECH NJW3281G
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 15A
- Power Dissipation (Pd) 200W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 75@3A,5V
- Collector Cut-Off Current (Icbo) 50mA
- Collector-Emitter Breakdown Voltage (Vceo) 250V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@8A,800mA
- Package TO-3PN
- Manufacturer SPTECH
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 15A
- Voltage - Collector Emitter Breakdown (Max) 250V
- Vce Saturation (Max) @ Ib, Ic 600mV @ 800mA, 8A
- Current - Collector Cutoff (Max) 50µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A, 5V
- Power - Max 200W
- Frequency - Transition 30MHz
- Mounting Type Through Hole
- Package / Case TO-3P-3, SC-65-3
- Supplier Device Package TO-3P-3L
- Base Part Number NJW32
- detail Bipolar (BJT) Transistor NPN 250V 15A 30MHz 200W Through Hole TO-3P-3L
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