SBCP56-10T1G
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| Manufacturer | onsemi |
| Package | TO-261-4, TO-261AA |
| Datasheet | SBCP56-10T1G |
| Description | Bipolar (BJT) Transistor NPN 80V 1.2A 1W Surface Mount SOT-223-4 |
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مشخصات SBCP56-10T1G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi SBCP56-10T1G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 1.5W
- Transition Frequency (fT) 130MHz
- DC Current Gain (hFE@Ic,Vce) 63@150mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@500mA,50mA
- Package SOT-223-4
- Manufacturer onsemi
- Series -
- Packaging Digi-Reel®
- Part Status Obsolete
- Current - Collector (Ic) (Max) 1.2A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
- Power - Max 1W
- Frequency - Transition -
- Mounting Type Surface Mount
- Package / Case TO-261-4, TO-261AA
- Supplier Device Package SOT-223-4
- Base Part Number BCP56
- detail Bipolar (BJT) Transistor NPN 80V 1.2A 1W Surface Mount SOT-223-4
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