FQB5N90TM
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | FQB5N90 |
| Description | N-Channel 900V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB) |
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مشخصات FQB5N90TM
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQB5N90TM
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 3.13W;158W
- Total Gate Charge (Qg@Vgs) 40nC@10V
- Drain Source Voltage (Vdss) 900V
- Input Capacitance (Ciss@Vds) 1550pF@25V
- Continuous Drain Current (Id) 5.4A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.3Ω@10V,2.7A
- Package TO-263-3
- Manufacturer onsemi
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 900V
- Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.3Ohm @ 2.7A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3.13W (Ta), 158W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D²PAK (TO-263AB)
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number FQB5
- detail N-Channel 900V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB)
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