HGTP12N60C3D

HGTP12N60C3D

HGTP12N60C3D

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مشخصات فنی:
Manufacturer onsemi
Package TO-220-3
Datasheet TO220B03 Pkg Drawing
Description IGBT 600V 24A 104W Through Hole TO-220-3

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مشخصات

  • RoHS true
  • Type -
  • Category Triode/MOS Tube/Transistor/IGBTs
  • Datasheet onsemi HGTP12N60C3D
  • Operating Temperature 40°C~+150°C@(Tj)
  • Collector Current (Ic) 24A
  • Power Dissipation (Pd) 104W
  • Turn?on Delay Time (Td(on)) 28ns
  • Input Capacitance (Cies@Vce) -
  • Turn?on Switching Loss (Eon) 0.38mJ
  • Diode Forward Voltage (Vf@If) 1.7V@12A
  • Total Gate Charge (Qg@Ic,Vge) 48nC
  • Turn?off Delay Time (Td(off)) 270ns
  • Pulsed Collector Current (Icm) 96A
  • Turn?off Switching Loss (Eoff) 0.9mJ
  • Diode Reverse Recovery Time (Trr) 40ns
  • Collector Cut-Off Current (Ices@Vce) 250uA@600V
  • Collector-Emitter Breakdown Voltage (Vces) 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2.2V@15V,15A
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) 1.8V@15A,15V
  • Package TO-220AB-3
  • Manufacturer onsemi
  • Series -
  • Packaging Tube
  • Part Status Obsolete
  • IGBT Type -
  • Voltage - Collector Emitter Breakdown (Max) 600V
  • Current - Collector (Ic) (Max) 24A
  • Current - Collector Pulsed (Icm) 96A
  • Vce(on) (Max) @ Vge, Ic 2V @ 15V, 12A
  • Power - Max 104W
  • Switching Energy 380µJ (on), 900µJ (off)
  • Input Type Standard
  • Gate Charge 48nC
  • Td (on/off) @ 25°C -
  • Test Condition -
  • Mounting Type Through Hole
  • Package / Case TO-220-3
  • Supplier Device Package TO-220-3
  • Base Part Number HGTP12N60
  • detail IGBT 600V 24A 104W Through Hole TO-220-3

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