HGTP12N60C3D دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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TO220B03 Pkg Drawing
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حجم فایل
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99.003
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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1
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi HGTP12N60C3D
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Operating Temperature:
40°C~+150°C@(Tj)
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Collector Current (Ic):
24A
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Power Dissipation (Pd):
104W
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Turn?on Delay Time (Td(on)):
28ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
0.38mJ
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Diode Forward Voltage (Vf@If):
1.7V@12A
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Total Gate Charge (Qg@Ic,Vge):
48nC
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Turn?off Delay Time (Td(off)):
270ns
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Pulsed Collector Current (Icm):
96A
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Turn?off Switching Loss (Eoff):
0.9mJ
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Diode Reverse Recovery Time (Trr):
40ns
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Collector Cut-Off Current (Ices@Vce):
250uA@600V
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Collector-Emitter Breakdown Voltage (Vces):
600V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.2V@15V,15A
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge):
1.8V@15A,15V
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Package:
TO-220AB-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Obsolete
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IGBT Type:
-
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Voltage - Collector Emitter Breakdown (Max):
600V
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Current - Collector (Ic) (Max):
24A
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Current - Collector Pulsed (Icm):
96A
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Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 12A
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Power - Max:
104W
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Switching Energy:
380µJ (on), 900µJ (off)
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Input Type:
Standard
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Gate Charge:
48nC
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Td (on/off) @ 25°C:
-
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Test Condition:
-
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220-3
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Base Part Number:
HGTP12N60
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detail:
IGBT 600V 24A 104W Through Hole TO-220-3
