HUF75645S3ST
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | HUF75645P3, HUF75645S3S |
| Description | N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263AB) |
فروشنده های HUF75645S3ST
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مشخصات HUF75645S3ST
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi HUF75645S3ST
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 310W
- Total Gate Charge (Qg@Vgs) 238nC@20V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 3790pF@25V
- Continuous Drain Current (Id) 75A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 140mΩ@10V,75A
- Package TO-263-3
- Manufacturer onsemi
- Series UltraFET™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 14mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 238nC @ 20V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 3790pF @ 25V
- FET Feature -
- Power Dissipation (Max) 310W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D²PAK (TO-263AB)
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number HUF75
- detail N-Channel 100V 75A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263AB)
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