FDP2710
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | FDP2710 |
| Description | N-Channel 250V 50A (Tc) 260W (Tc) Through Hole TO-220-3 |
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مشخصات FDP2710
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDP2710
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 260W
- Total Gate Charge (Qg@Vgs) 101nC@10V
- Drain Source Voltage (Vdss) 250V
- Input Capacitance (Ciss@Vds) 7280pF@25V
- Continuous Drain Current (Id) 50A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 42.5mΩ@25A,10V
- Package TO-220
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 250V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 42.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 101nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 7280pF @ 25V
- FET Feature -
- Power Dissipation (Max) 260W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FDP27
- detail N-Channel 250V 50A (Tc) 260W (Tc) Through Hole TO-220-3
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