MMBT3416LT3G
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| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | MMBT3416LT3G |
| Description | Bipolar (BJT) Transistor NPN 50V 500mA 350mW Surface Mount SOT-23-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MMBT3416LT3G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 225mW
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 75@2mA,4.5V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@50mA,3mA
- Package SOT-23(TO-236)
- Manufacturer onsemi
- Series -
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Current - Collector (Ic) (Max) 500mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic -
- Current - Collector Cutoff (Max) -
- DC Current Gain (hFE) (Min) @ Ic, Vce -
- Power - Max 350mW
- Frequency - Transition -
- Mounting Type Surface Mount
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23-3
- Base Part Number MMBT3416
- detail Bipolar (BJT) Transistor NPN 50V 500mA 350mW Surface Mount SOT-23-3
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