NJVMJD350T4G
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | MJD3x0,NJVMJD3x0T4G |
| Description | Bipolar (BJT) Transistor PNP 300V 500mA 10MHz 1.56W Surface Mount DPAK |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NJVMJD350T4G
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 500mA
- Power Dissipation (Pd) 1.56W
- Transition Frequency (fT) 10MHz
- DC Current Gain (hFE@Ic,Vce) 30@50mA,10V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 300V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@10mA,100mA
- Package TO-252
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Active
- Current - Collector (Ic) (Max) 500mA
- Voltage - Collector Emitter Breakdown (Max) 300V
- Vce Saturation (Max) @ Ib, Ic 1V @ 10mA, 100mA
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V
- Power - Max 1.56W
- Frequency - Transition 10MHz
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package DPAK
- Base Part Number NJVMJD350
- detail Bipolar (BJT) Transistor PNP 300V 500mA 10MHz 1.56W Surface Mount DPAK
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