BD242CG
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | BD241C, 42B,C |
| Description | Bipolar (BJT) Transistor PNP 100V 3A 3MHz 40W Through Hole TO-220AB |
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مشخصات BD242CG
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BD242CG
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 3A
- Power Dissipation (Pd) 40W
- Transition Frequency (fT) 3MHz
- DC Current Gain (hFE@Ic,Vce) 25@1A,4V
- Collector Cut-Off Current (Icbo) 300uA
- Collector-Emitter Breakdown Voltage (Vceo) 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.2V@3A,600mA
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 3A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
- Current - Collector Cutoff (Max) 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 4V
- Power - Max 40W
- Frequency - Transition 3MHz
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number BD242
- detail Bipolar (BJT) Transistor PNP 100V 3A 3MHz 40W Through Hole TO-220AB
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