2SJ661-1E
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| Manufacturer | onsemi |
| Package | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Datasheet | 2SJ661 |
| Description | P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3 |
فروشنده های 2SJ661-1E
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مشخصات 2SJ661-1E
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi 2SJ661-1E
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 65W
- Total Gate Charge (Qg@Vgs) 80nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 4.36nF@20V
- Continuous Drain Current (Id) 38A
- Gate Threshold Voltage (Vgs(th)@Id) 2.6V@1mA
- Reverse Transfer Capacitance (Crss@Vds) 335pF@20V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 29.5mΩ@10V,19A
- Package TO-262
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Rds On (Max) @ Id, Vgs 39mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id -
- Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 20V
- FET Feature -
- Power Dissipation (Max) 1.65W (Ta), 65W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-262-3
- Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number 2SJ661
- detail P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3
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