FQPF8N80C
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| Manufacturer | onsemi |
| Package | TO-220-3 Full Pack |
| Datasheet | FQP8N80C, FQPF8N80C |
| Description | N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F |
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مشخصات FQPF8N80C
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQPF8N80C
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 59W
- Total Gate Charge (Qg@Vgs) 45nC@10V
- Drain Source Voltage (Vdss) 800V
- Input Capacitance (Ciss@Vds) 2050pF@25V
- Continuous Drain Current (Id) 8A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.55Ω@10V,4A
- Package TO-220F
- Manufacturer onsemi
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800V
- Current - Continuous Drain (Id) @ 25°C 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.55Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 25V
- FET Feature -
- Power Dissipation (Max) 59W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220F
- Package / Case TO-220-3 Full Pack
- Base Part Number FQPF8
- detail N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F
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