MJE4343G
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| Manufacturer | onsemi |
| Package | TO-247-3 |
| Datasheet | MJE4343, 53 |
| Description | Bipolar (BJT) Transistor NPN 160V 16A 1MHz 125W Through Hole TO-247 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJE4343G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 16A
- Power Dissipation (Pd) 125W
- Transition Frequency (fT) 1MHz
- DC Current Gain (hFE@Ic,Vce) 15@8A,2V
- Collector Cut-Off Current (Icbo) 750uA
- Collector-Emitter Breakdown Voltage (Vceo) 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 3.5V@16A,2A
- Package TO-247
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 16A
- Voltage - Collector Emitter Breakdown (Max) 160V
- Vce Saturation (Max) @ Ib, Ic 3.5V @ 2A, 16A
- Current - Collector Cutoff (Max) 750µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A, 2V
- Power - Max 125W
- Frequency - Transition 1MHz
- Mounting Type Through Hole
- Package / Case TO-247-3
- Supplier Device Package TO-247
- Base Part Number MJE43
- detail Bipolar (BJT) Transistor NPN 160V 16A 1MHz 125W Through Hole TO-247
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