BDX54BG
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Manufacturer | onsemi |
Package | TO-220-3 |
Datasheet | BDX53(B, C), BDX54(B, C) |
Description | Bipolar (BJT) Transistor PNP - Darlington 80V 8A 60W Through Hole TO-220AB |
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مشخصات BDX54BG
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BDX54BG
- Transistor Type PNP
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 65W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 750@3A,3V
- Collector Cut-Off Current (Icbo) 200uA
- Collector-Emitter Breakdown Voltage (Vceo) 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 4V@3A,12mA
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
- Current - Collector Cutoff (Max) 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
- Power - Max 60W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number BDX54
- detail Bipolar (BJT) Transistor PNP - Darlington 80V 8A 60W Through Hole TO-220AB
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