BUL45D2G
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | BUL45D2 |
| Description | Bipolar (BJT) Transistor NPN 400V 5A 13MHz 75W Through Hole TO-220AB |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi BUL45D2G
- Transistor Type NPN
- Operating Temperature -65°C~+150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 75W
- Transition Frequency (fT) 13MHz
- DC Current Gain (hFE@Ic,Vce) 10@2A,1V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 320mV@2A,400mA
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 400V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 400mA, 2A
- Current - Collector Cutoff (Max) 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 1V
- Power - Max 75W
- Frequency - Transition 13MHz
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220AB
- Base Part Number BUL45
- detail Bipolar (BJT) Transistor NPN 400V 5A 13MHz 75W Through Hole TO-220AB
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