FQPF6N90C
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| Manufacturer | onsemi |
| Package | TO-220-3 Full Pack |
| Datasheet | FQP6N90C, FQPF6N90C |
| Description | N-Channel 900V 6A (Tc) 56W (Tc) Through Hole TO-220F |
فروشنده های FQPF6N90C
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تغییرات قیمت
مشخصات FQPF6N90C
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQPF6N90C
- Power Dissipation (Pd) 56W
- Drain Source Voltage (Vdss) 900V
- Continuous Drain Current (Id) 6A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.3Ω@10V,3A
- Package TO-220IS
- Manufacturer onsemi
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 900V
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.3Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
- FET Feature -
- Power Dissipation (Max) 56W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220F
- Package / Case TO-220-3 Full Pack
- Base Part Number FQPF6
- detail N-Channel 900V 6A (Tc) 56W (Tc) Through Hole TO-220F
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