MJD253-1G
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| Manufacturer | ON Semiconductor |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | MJD243,253 |
| Description | Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK |
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مشخصات MJD253-1G
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Active
- Transistor Type PNP
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 100V
- Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V
- Power - Max 1.4W
- Frequency - Transition 40MHz
- Operating Temperature -65°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package I-PAK
- Base Part Number MJD25
- detail Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK
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