دیتاشیت MJD253-1G

MJD243,253

مشخصات دیتاشیت

نام دیتاشیت MJD243,253
حجم فایل 109.881 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت MJD243,253

MJD243,253 Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
  • Power - Max: 1.4W
  • Frequency - Transition: 40MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: I-PAK
  • Base Part Number: MJD25
  • detail: Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK

دیتاشیت محصولات مشابه