FDMC86116LZ
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| Manufacturer | onsemi |
| Package | 8-PowerWDFN |
| Datasheet | FDMC86116LZ |
| Description | N-Channel 100V 3.3A (Ta), 7.5A (Tc) 2.3W (Ta), 19W (Tc) Surface Mount 8-MLP (3.3x3.3) |
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مشخصات FDMC86116LZ
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDMC86116LZ
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.3W;19W
- Total Gate Charge (Qg@Vgs) 6nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 310pF@50V
- Continuous Drain Current (Id) 3.3A;7.5A
- Gate Threshold Voltage (Vgs(th)@Id) 2.2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 103mΩ@10V,3.3A
- Package MLP-8(3.3x3.3)
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 3.3A (Ta), 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 103mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 310pF @ 50V
- FET Feature -
- Power Dissipation (Max) 2.3W (Ta), 19W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package 8-MLP (3.3x3.3)
- Package / Case 8-PowerWDFN
- Base Part Number FDMC86
- detail N-Channel 100V 3.3A (Ta), 7.5A (Tc) 2.3W (Ta), 19W (Tc) Surface Mount 8-MLP (3.3x3.3)
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