HGTG18N120BND
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| Manufacturer | onsemi |
| Package | TO-247-3 |
| Datasheet | HGTG18N120BND |
| Description | IGBT NPT 1200V 54A 390W Through Hole TO-247-3 |
فروشنده های HGTG18N120BND
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مشخصات HGTG18N120BND
- RoHS true
- Type NPT
- Category Triode/MOS Tube/Transistor/IGBTs
- Operating Temperature 55°C~+150°C@(Tj)
- Collector Current (Ic) 54A
- Power Dissipation (Pd) 390W
- Turn?on Delay Time (Td(on)) 23ns
- Turn?on Switching Loss (Eon) 1.9mJ
- Total Gate Charge (Qg@Ic,Vge) 165nC
- Turn?off Delay Time (Td(off)) 170ns
- Pulsed Collector Current (Icm) 160A
- Turn?off Switching Loss (Eoff) 1.8mJ
- Diode Reverse Recovery Time (Trr) 75ns
- Collector-Emitter Breakdown Voltage (Vces) 1200V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2.7V@15V,18A
- Package TO-247
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Not For New Designs
- IGBT Type NPT
- Voltage - Collector Emitter Breakdown (Max) 1200V
- Current - Collector (Ic) (Max) 54A
- Current - Collector Pulsed (Icm) 165A
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A
- Power - Max 390W
- Switching Energy 800µJ (on), 1.8mJ (off)
- Input Type Standard
- Gate Charge 165nC
- Td (on/off) @ 25°C 23ns/170ns
- Test Condition 960V, 18A, 3Ohm, 15V
- Mounting Type Through Hole
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Base Part Number HGTG18N120
- detail IGBT NPT 1200V 54A 390W Through Hole TO-247-3
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