FQB33N10TM
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| Manufacturer | ON Semiconductor |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | FQB33N10 |
| Description | N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB) |
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مشخصات FQB33N10TM
- Manufacturer ON Semiconductor
- Series QFET®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 52mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3.75W (Ta), 127W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D²PAK (TO-263AB)
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number FQB3
- detail N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB)
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