30A02MH-TL-E
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| Manufacturer | onsemi |
| Package | 3-SMD, Flat Lead |
| Datasheet | 30A02MH |
| Description | Bipolar (BJT) Transistor PNP 30V 700mA 520MHz 600mW Surface Mount 3-MCPH |
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مشخصات 30A02MH-TL-E
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 30A02MH-TL-E
- Transistor Type PNP
- Collector Current (Ic) 700mA
- Power Dissipation (Pd) 600mW
- Transition Frequency (fT) 520MHz
- DC Current Gain (hFE@Ic,Vce) 200@10mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 220mV@10mA,200mA
- Package MCPH-3
- Manufacturer onsemi
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- Current - Collector (Ic) (Max) 700mA
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 220mV @ 10mA, 200mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA, 2V
- Power - Max 600mW
- Frequency - Transition 520MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Surface Mount
- Package / Case 3-SMD, Flat Lead
- Supplier Device Package 3-MCPH
- Base Part Number 30A02
- detail Bipolar (BJT) Transistor PNP 30V 700mA 520MHz 600mW Surface Mount 3-MCPH
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