NSV12200LT1G
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| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | NSS12200LT1G |
| Description | Bipolar (BJT) Transistor PNP 12V 2A 100MHz 540mW Surface Mount SOT-23-3 (TO-236) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi NSV12200LT1G
- Transistor Type PNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 2A
- Power Dissipation (Pd) 540mW
- Transition Frequency (fT) 100MHz
- DC Current Gain (hFE@Ic,Vce) 250@500mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 12V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 130mV@2A,200mA
- Package SOT-23(TO-236)
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- Current - Collector (Ic) (Max) 2A
- Voltage - Collector Emitter Breakdown (Max) 12V
- Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA, 2V
- Power - Max 540mW
- Frequency - Transition 100MHz
- Mounting Type Surface Mount
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23-3 (TO-236)
- Base Part Number NSV122
- detail Bipolar (BJT) Transistor PNP 12V 2A 100MHz 540mW Surface Mount SOT-23-3 (TO-236)
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