NVTFWS005N04CTAG
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| Manufacturer | onsemi |
| Package | 8-PowerWDFN |
| Datasheet | NVTFS005N04C |
| Description | N-Channel 40V 17A (Ta), 69A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount, Wettable Flank 8-WDFN (3.3x3.3) |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NVTFWS005N04CTAG
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 3.1W;50W
- Total Gate Charge (Qg@Vgs) 16nC@10V
- Drain Source Voltage (Vdss) 40V
- Input Capacitance (Ciss@Vds) 1nF@25V
- Continuous Drain Current (Id) 17A;69A
- Gate Threshold Voltage (Vgs(th)@Id) 3.5V@240uA
- Reverse Transfer Capacitance (Crss@Vds) 22pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 4.7mΩ@10V,35A
- Package DFN-8(3x3)
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 17A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 5.6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3.1W (Ta), 50W (Tc)
- Mounting Type Surface Mount, Wettable Flank
- Supplier Device Package 8-WDFN (3.3x3.3)
- Package / Case 8-PowerWDFN
- Base Part Number NVTFWS
- detail N-Channel 40V 17A (Ta), 69A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount, Wettable Flank 8-WDFN (3.3x3.3)
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