KSD526YTU
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | KSD526 |
| Description | Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi KSD526YTU
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 4A
- Voltage - Collector Emitter Breakdown (Max) 80V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
- Current - Collector Cutoff (Max) 30µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V
- Power - Max 30W
- Frequency - Transition 8MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Base Part Number KSD526
- detail Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3
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