IRF634B-FP001
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | IRF634B |
| Description | N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220-3 |
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مشخصات IRF634B-FP001
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 250V
- Current - Continuous Drain (Id) @ 25°C 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 450mOhm @ 4.05A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
- FET Feature -
- Power Dissipation (Max) 74W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number IRF63
- detail N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220-3
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