دیتاشیت IRF634B-FP001
مشخصات دیتاشیت
نام دیتاشیت |
IRF634B
|
حجم فایل |
1107.899
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Tube
-
Part Status:
Not For New Designs
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
250V
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Current - Continuous Drain (Id) @ 25°C:
8.1A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
450mOhm @ 4.05A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
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Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
74W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220-3
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Package / Case:
TO-220-3
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Base Part Number:
IRF63
-
detail:
N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220-3