دیتاشیت IRF634B-FP001

IRF634B

مشخصات دیتاشیت

نام دیتاشیت IRF634B
حجم فایل 1107.899 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت IRF634B

IRF634B Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Tube
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 4.05A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: IRF63
  • detail: N-Channel 250V 8.1A (Tc) 74W (Tc) Through Hole TO-220-3