FQD9N25TM-F085
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| Manufacturer | onsemi |
| Package | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheet | FQD9N25TM-F085 |
| Description | N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak |
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مشخصات FQD9N25TM-F085
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FQD9N25TM-F085
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 2.5W;55W
- Total Gate Charge (Qg@Vgs) 20nC@10V
- Drain Source Voltage (Vdss) 250V
- Input Capacitance (Ciss@Vds) 700pF@25V
- Continuous Drain Current (Id) 7.4A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 420mΩ@3.7A,10V
- Package TO-252
- Manufacturer onsemi
- Series Automotive, AEC-Q101, QFET®
- Packaging Cut Tape (CT)
- Part Status Discontinued at Digi-Key
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 250V
- Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 420mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D-Pak
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number FQD9
- detail N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak
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