FDP053N08B-F102
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | FDP053N08B_F102 |
| Description | N-Channel 80V 75A (Tc) 146W (Tc) Through Hole TO-220-3 |
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مشخصات FDP053N08B-F102
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDP053N08B-F102
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 146W
- Total Gate Charge (Qg@Vgs) 85nC@10V
- Drain Source Voltage (Vdss) 80V
- Input Capacitance (Ciss@Vds) 5960pF@40V
- Continuous Drain Current (Id) 75A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 5.3mΩ@75A,10V
- Package TO-220
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 5.3mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 5960pF @ 40V
- FET Feature -
- Power Dissipation (Max) 146W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FDP053
- detail N-Channel 80V 75A (Tc) 146W (Tc) Through Hole TO-220-3
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