NVMFS5C612NLAFT3G
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| Manufacturer | onsemi |
| Package | 8-PowerTDFN, 5 Leads |
| Datasheet | NVMFS5C612NL |
| Description | N-Channel 60V 38A (Ta), 250A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL) |
sellers NVMFS5C612NLAFT3G
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NVMFS5C612NLAFT3G
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 3.8W;167W
- Total Gate Charge (Qg@Vgs) 91nC@10V
- Input Capacitance (Ciss@Vds) 6660pF@25V
- Continuous Drain Current (Id) 38A;250A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.36mΩ@50A,10V
- Package SO-8FL
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 38A (Ta), 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 1.36mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 6660pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package 5-DFN (5x6) (8-SOFL)
- Package / Case 8-PowerTDFN, 5 Leads
- Base Part Number NVMFS5
- detail N-Channel 60V 38A (Ta), 250A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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