FCI25N60N-F102
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| Manufacturer | ON Semiconductor |
| Package | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Datasheet | FCI25N60N_F102 |
| Description | N-Channel 600V 25A (Tc) 216W (Tc) Through Hole I2PAK (TO-262) |
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مشخصات FCI25N60N-F102
- Manufacturer ON Semiconductor
- Series SupreMOS™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 125mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 3352pF @ 100V
- FET Feature -
- Power Dissipation (Max) 216W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I2PAK (TO-262)
- Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number FCI25
- detail N-Channel 600V 25A (Tc) 216W (Tc) Through Hole I2PAK (TO-262)
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