HGT1S12N60A4DS
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS |
| Description | IGBT 600V 54A 167W Surface Mount TO-263AB |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet onsemi HGT1S12N60A4DS
- Package TO-263
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Not For New Designs
- IGBT Type -
- Voltage - Collector Emitter Breakdown (Max) 600V
- Current - Collector (Ic) (Max) 54A
- Current - Collector Pulsed (Icm) 96A
- Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
- Power - Max 167W
- Switching Energy 55µJ (on), 50µJ (off)
- Input Type Standard
- Gate Charge 78nC
- Td (on/off) @ 25°C 17ns/96ns
- Test Condition 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr) 30ns
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package TO-263AB
- Base Part Number HGT1S12
- detail IGBT 600V 54A 167W Surface Mount TO-263AB
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