فروشنده های 5LN01C-TB-E
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مشخصات 5LN01C-TB-E
- Manufacturer ON Semiconductor
- Series -
- Packaging Cut Tape (CT)
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 50V
- Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
- Rds On (Max) @ Id, Vgs 7.8Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id -
- Gate Charge (Qg) (Max) @ Vgs 1.57nC @ 10V
- Vgs (Max) ±10V
- Input Capacitance (Ciss) (Max) @ Vds 6.6pF @ 10V
- FET Feature -
- Power Dissipation (Max) 250mW (Ta)
- Operating Temperature 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 3-CP
- Package / Case TO-236-3, SC-59, SOT-23-3
- Base Part Number 5LN01
- detail N-Channel 50V 100mA (Ta) 250mW (Ta) Surface Mount 3-CP
فروشنده های 5LN01C-TB-E
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