فروشنده های NDD60N745U1-1G
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مشخصات NDD60N745U1-1G
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 745mOhm @ 3.25A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 440pF @ 50V
- FET Feature -
- Power Dissipation (Max) 84W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I-PAK
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number NDD60
- detail N-Channel 600V 6.6A (Tc) 84W (Tc) Through Hole I-PAK
فروشنده های NDD60N745U1-1G
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