IXTH48N65X2
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| Manufacturer | IXYS |
| Package | TO-247-3 |
| Datasheet | IXTH48N65X2 |
| Description | N-Channel 650V 48A (Tc) 660W (Tc) Through Hole TO-247 |
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تغییرات قیمت
مشخصات
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Littelfuse/IXYS IXTH48N65X2
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 660W
- Total Gate Charge (Qg@Vgs) 77nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 4420pF@25V
- Continuous Drain Current (Id) 48A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 68mΩ@10V,24A
- Package TO-247
- Manufacturer IXYS
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 68mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 4420pF @ 25V
- FET Feature -
- Power Dissipation (Max) 660W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Package / Case TO-247-3
- detail N-Channel 650V 48A (Tc) 660W (Tc) Through Hole TO-247
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