STFI6N65K3
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| Manufacturer | STMicroelectronics |
| Package | TO-262-3 Full Pack, I²Pak |
| Datasheet | STx(x)6N65K3 |
| Description | N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281) |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STFI6N65K3
- Power Dissipation (Pd) 30W
- Total Gate Charge (Qg@Vgs) 33nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 880pF@50V
- Continuous Drain Current (Id) 5.4A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@50uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.3Ω@2.7A,10V
- Package TO-281
- Manufacturer STMicroelectronics
- Series SuperMESH3™
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.7A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 880pF @ 50V
- FET Feature -
- Power Dissipation (Max) 30W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I2PAKFP (TO-281)
- Package / Case TO-262-3 Full Pack, I²Pak
- Base Part Number STFI6N
- detail N-Channel 650V 5.4A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
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