STH12N120K5-2
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| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | STx12N120K5(-2), STWA12N120K5 |
| Description | N-Channel 1200V 12A (Tc) 250W (Tc) Surface Mount H2Pak-2 |
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مشخصات STH12N120K5-2
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STH12N120K5-2
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 250W
- Total Gate Charge (Qg@Vgs) 44.2nC@10V
- Drain Source Voltage (Vdss) 1.2kV
- Input Capacitance (Ciss@Vds) 1370pF@100V
- Continuous Drain Current (Id) 12A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@100uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 690mΩ@10V,6A
- Package H2PAK
- Manufacturer STMicroelectronics
- Series MDmesh™ K5
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1200V
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 44.2nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 100V
- FET Feature -
- Power Dissipation (Max) 250W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package H2Pak-2
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number STH12N
- detail N-Channel 1200V 12A (Tc) 250W (Tc) Surface Mount H2Pak-2
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