STP57N65M5
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Datasheet | STx57N65M5 |
| Description | N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-220 |
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مشخصات STP57N65M5
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STP57N65M5
- Power Dissipation (Pd) 250W
- Total Gate Charge (Qg@Vgs) 98nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 4200pF@100V
- Continuous Drain Current (Id) 42A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 63mΩ@21A,10V
- Package TO-220
- Manufacturer STMicroelectronics
- Series MDmesh™ V
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 63mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 100V
- FET Feature -
- Power Dissipation (Max) 250W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Package / Case TO-220-3
- Base Part Number STP57N
- detail N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-220
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