BU508AW
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| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | BU508AW |
| Description | Bipolar (BJT) Transistor NPN 700V 8A 125W Through Hole TO-247-3 |
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تغییرات قیمت
مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet STMicroelectronics BU508AW
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 8A
- Power Dissipation (Pd) 125W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 10@100mA,5V
- Collector Cut-Off Current (Icbo) 200uA
- Collector-Emitter Breakdown Voltage (Vceo) 700V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@4.5A,1.6A
- Package TO-247
- Manufacturer STMicroelectronics
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 8A
- Voltage - Collector Emitter Breakdown (Max) 700V
- Vce Saturation (Max) @ Ib, Ic 1V @ 1.6A, 4.5A
- Current - Collector Cutoff (Max) 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA, 5V
- Power - Max 125W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Base Part Number BU508
- detail Bipolar (BJT) Transistor NPN 700V 8A 125W Through Hole TO-247-3
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