STW12N120K5
در 1 فروشگاه قیمت هنوز مشخص نشده است
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Datasheet | STx12N120K5(-2), STWA12N120K5 |
| Description | N-Channel 1200V 12A (Tc) 250W (Tc) Through Hole TO-247 |
فروشنده های STW12N120K5
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تغییرات قیمت
مشخصات STW12N120K5
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STW12N120K5
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 250W
- Total Gate Charge (Qg@Vgs) 44.2nC@10V
- Drain Source Voltage (Vdss) 1.2kV
- Input Capacitance (Ciss@Vds) 1370pF@100V
- Continuous Drain Current (Id) 12A
- Gate Threshold Voltage (Vgs(th)@Id) 5V@100uA
- Reverse Transfer Capacitance (Crss@Vds) 0.6pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 620mΩ@10V,6A
- Package TO-247
- Manufacturer STMicroelectronics
- Series MDmesh™ K5
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1200V
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 44.2nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 100V
- FET Feature -
- Power Dissipation (Max) 250W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Package / Case TO-247-3
- Base Part Number STW12N
- detail N-Channel 1200V 12A (Tc) 250W (Tc) Through Hole TO-247
فروشنده های STW12N120K5
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| STW12N120K5 | بدون قیمت |
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