دیتاشیت STW12N120K5

STx12N120K5(-2), STWA12N120K5

مشخصات دیتاشیت

نام دیتاشیت STx12N120K5(-2), STWA12N120K5
حجم فایل 826.289 کیلوبایت
نوع فایل pdf
تعداد صفحات 21

دانلود دیتاشیت STx12N120K5(-2), STWA12N120K5

STx12N120K5(-2), STWA12N120K5 Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STW12N120K5
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 250W
  • Total Gate Charge (Qg@Vgs): 44.2nC@10V
  • Drain Source Voltage (Vdss): 1.2kV
  • Input Capacitance (Ciss@Vds): 1370pF@100V
  • Continuous Drain Current (Id): 12A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Reverse Transfer Capacitance (Crss@Vds): 0.6pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 620mΩ@10V,6A
  • Package: TO-247
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ K5
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
  • Base Part Number: STW12N
  • detail: N-Channel 1200V 12A (Tc) 250W (Tc) Through Hole TO-247

دیتاشیت محصولات مشابه