CSD75207W15
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| Manufacturer | Texas Instruments |
| Package | 9-UFBGA, DSBGA |
| Datasheet | CSD75207W15 |
| Description | Mosfet Array 2 P-Channel (Dual) Common Source 3.9A 700mW Surface Mount 9-DSBGA |
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مشخصات
- RoHS true
- Type 2 P-Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Texas Instruments CSD75207W15
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 700mW
- Total Gate Charge (Qg@Vgs) 3.7nC@4.5V
- Drain Source Voltage (Vdss) -
- Input Capacitance (Ciss@Vds) 595pF@10V
- Continuous Drain Current (Id) 3.9A
- Gate Threshold Voltage (Vgs(th)@Id) 1.1V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 162mΩ@1.8V,1A
- Package BGA-9
- Manufacturer Texas Instruments
- Drain to Source Voltage (Vdss) -
- Power - Max 700mW
- Rds On (Max) @ Id, Vgs 162mOhm @ 1A, 1.8V
- FET Type 2 P-Channel (Dual) Common Source
- Part Status Active
- Current - Continuous Drain (Id) @ 25°C 3.9A
- FET Feature Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds 595pF @ 10V
- Packaging Cut Tape (CT)
- Package / Case 9-UFBGA, DSBGA
- Series NexFET™
- Vgs(th) (Max) @ Id 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V
- Supplier Device Package 9-DSBGA
- Mounting Type Surface Mount
- Base Part Number CSD7520
- detail Mosfet Array 2 P-Channel (Dual) Common Source 3.9A 700mW Surface Mount 9-DSBGA
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