STB13NM60N
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| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | ST(B,D)13NM60N Datasheet |
| Description | N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount D2PAK |
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مشخصات STB13NM60N
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STB13NM60N
- Power Dissipation (Pd) 90W
- Total Gate Charge (Qg@Vgs) 30nC@10V
- Input Capacitance (Ciss@Vds) 790pF@50V
- Continuous Drain Current (Id) 11A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 360mΩ@5.5A,10V
- Package D2PAK
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
- Vgs (Max) ±25V
- Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
- FET Feature -
- Power Dissipation (Max) 90W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number STB13N
- detail N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount D2PAK
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