STGF10NB60SD
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| Manufacturer | STMicroelectronics |
| Package | TO-220-3 Full Pack |
| Datasheet | STG(F,P)10NB60SD |
| Description | IGBT 600V 23A 25W Through Hole TO-220FP |
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مشخصات STGF10NB60SD
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet STMicroelectronics STGF10NB60SD
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 23A
- Power Dissipation (Pd) 25W
- Input Capacitance (Cies@Vce) -
- Turn?on Switching Loss (Eon) 0.6mJ
- Pulsed Collector Current (Icm) 80A
- Turn?off Switching Loss (Eoff) 5mJ
- Diode Reverse Recovery Time (Trr) 37ns
- Collector-Emitter Breakdown Voltage (Vces) 600V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) -
- Package TO-220FP-3
- Manufacturer STMicroelectronics
- Series PowerMESH™
- Packaging Tube
- Part Status Active
- IGBT Type -
- Voltage - Collector Emitter Breakdown (Max) 600V
- Current - Collector (Ic) (Max) 23A
- Current - Collector Pulsed (Icm) 80A
- Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
- Power - Max 25W
- Switching Energy 600µJ (on), 5mJ (off)
- Input Type Standard
- Gate Charge 33nC
- Td (on/off) @ 25°C 700ns/1.2µs
- Test Condition 480V, 10A, 1kOhm, 15V
- Reverse Recovery Time (trr) 37ns
- Mounting Type Through Hole
- Package / Case TO-220-3 Full Pack
- Supplier Device Package TO-220FP
- Base Part Number STGF10
- detail IGBT 600V 23A 25W Through Hole TO-220FP
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