STB4NK60Z-1
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| Manufacturer | STMicroelectronics |
| Package | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Datasheet | STx4NK60Z(FP,-1) |
| Description | N-Channel 600V 4A (Tc) 70W (Tc) Through Hole I2PAK |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STB4NK60Z-1
- Power Dissipation (Pd) 70W
- Total Gate Charge (Qg@Vgs) 26nC@10V
- Input Capacitance (Ciss@Vds) 510pF@25V
- Continuous Drain Current (Id) 4A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@50uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2Ω@2A,10V
- Package I2PAK
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tube
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
- FET Feature -
- Power Dissipation (Max) 70W (Tc)
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package I2PAK
- Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number STB4N
- detail N-Channel 600V 4A (Tc) 70W (Tc) Through Hole I2PAK
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