STB6NK60ZT4
در 0 فروشگاه
قیمت هنوز مشخص نشده است
این محصول در حال حاضر فروشنده ای ندارد!
| Manufacturer | STMicroelectronics |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | STx6NK60Z(FP-1) |
| Description | N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK |
sellers STB6NK60ZT4
فروشگاهی یافت نشد
تغییرات قیمت
مشخصات STB6NK60ZT4
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet STMicroelectronics STB6NK60ZT4
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 110W
- Total Gate Charge (Qg@Vgs) 46nC@10V
- Input Capacitance (Ciss@Vds) 905pF@25V
- Continuous Drain Current (Id) 6A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@100uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 1.2Ω@3A,10V
- Package TO-263-3
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Cut Tape (CT)
- Part Status Not For New Designs
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 905pF @ 25V
- FET Feature -
- Power Dissipation (Max) 110W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number STB6N
- detail N-Channel 600V 6A (Tc) 110W (Tc) Surface Mount D2PAK
فروشنده ها
فروشگاهی یافت نشد
